- A paper ” Effects of Surface Orientation and Body thickness on the Performance of III-V Ultra-thin-body nMOSFETs” was presented in SISPAD 2017 Sept. 7-9 kamakura, Japan
- A paper ” Theoretical Study of Double-Hetero-junction AlGaN/GaN/InGaN/-doped HEMTs for Improved Transconductance Linearity” was presented in SISPAD 2020 Sept.23-Oct.6, Japan