Density of states (DOS)
A comparison of the DOS in GaSb and GaAs UTB-DG with literature
Solid symbols represent the literature result (ref. Kim, et al., “Effects of Surfae Orientation on the Performance of Idealized III-V Thin-Body Ballistic n-MOSFETs,” IEEE Electron Device Lett., Vol. 32, no.6, 2011)
DOS of InP and InSb UTB-DG with (111) and (100) surface orientations
DOS of InP, GaAs, GaSb, InSb UTB-DG with (111) surface orientation
