III-V UTB nMOSFET Performances
Top-of-the-barrier (TOB) simulation methodology
Ballistic performance
Surface orientation effects
UTB thickness effects
III-V UTB nMOSFET Performances
Top-of-the-barrier (TOB) simulation methodology
Ballistic performance
Surface orientation effects
UTB thickness effects
Non-coherent transport
Potential energy
Solid and dashed lines represent ballistic and scattering transport, respectively.
Quasi-fermi level
Current density
Donor atoms for n++-n+-n++ resistor
Charge density
Use non-equilibrium Green’s function (NEGF) to simulate ballistic multi-subband transmission
Drain voltage impact on channel electron density