III-V UTB nMOSFET Performances
Top-of-the-barrier (TOB) simulation methodology
Ballistic performance
Surface orientation effects
UTB thickness effects
Tag: GaSb
Injection velocity
Injection velocity Vinj
Comparison of III-V UTB-DG injection velocity with (100) and (111) surface orientations
(111) surface InP, GaAs, GaSb & InSb UTB-DG 4nm Vinj
(100) GaSb UTB thickness impact on injection velocity
Density of states
Density of states (DOS)
A comparison of the DOS in GaSb and GaAs UTB-DG with literature
Solid symbols represent the literature result (ref. Kim, et al., “Effects of Surfae Orientation on the Performance of Idealized III-V Thin-Body Ballistic n-MOSFETs,” IEEE Electron Device Lett., Vol. 32, no.6, 2011)
DOS of InP and InSb UTB-DG with (111) and (100) surface orientations
DOS of InP, GaAs, GaSb, InSb UTB-DG with (111) surface orientation
Double-gate
Double-gate (DG) band structure
InP (100) UTB 2nm
InP (100) UTB 4nm
InP (100) UTB 6nm
InP (111) UTB 4nm
GaAs (100) UTB 4nm
GaAs (111) UTB 4nm
GaSb (100) UTB 2nm
GaSb (100) UTB 4nm
GaSb (100) UTB 6nm
GaSb (111) UTB 4nm
InSb (100) UTB 4nm
InSb (111) UTB 4nm
