III-V UTB nMOSFET Performances
Top-of-the-barrier (TOB) simulation methodology
Ballistic performance
Surface orientation effects
UTB thickness effects
Tag: UTB-DG
Injection velocity
Injection velocity Vinj
Comparison of III-V UTB-DG injection velocity with (100) and (111) surface orientations
(111) surface InP, GaAs, GaSb & InSb UTB-DG 4nm Vinj
(100) GaSb UTB thickness impact on injection velocity
Density of states
Density of states (DOS)
A comparison of the DOS in GaSb and GaAs UTB-DG with literature
Solid symbols represent the literature result (ref. Kim, et al., “Effects of Surfae Orientation on the Performance of Idealized III-V Thin-Body Ballistic n-MOSFETs,” IEEE Electron Device Lett., Vol. 32, no.6, 2011)
DOS of InP and InSb UTB-DG with (111) and (100) surface orientations
DOS of InP, GaAs, GaSb, InSb UTB-DG with (111) surface orientation
